Abstract
The fabrication process of an innovative epitaxial trench JFET with vertical channel and double gate control is reviewed. Due to the excellent doping and thickness control of the epitaxial re-growth techniques, the sub-micron channel can be tailored for normally-on and -off operation. Due to the vertical channel design the epitaxial trench JFETs have narrow cell pitch for high-density power integration and high saturation current capabilities. The excellent performance of these fabricated and packaged JFET devices is demonstrated with on-wafer measurements and power switching tests. High current conduction tests are performed at room temperature and elevated temperatures of 125{degree sign}C with switching frequencies of 30 kHz and 200 kHz.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
