Abstract
Herein, a poly(N-vinyl carbazole) (PVK)/ϵ-gallium oxide (ϵ-Ga2O3) heterojunction device was fabricated by spin coating prepared PVK solution onto a ϵ-Ga2O3 thin film produced by metal-organic chemical vapor deposition. Under 254 nm ultraviolet light, the device shows obvious rectification characteristics of 37 at ±2 V and has a response speed of 0.52 s rise time and 0.11 s decay time at 5 V. Current–voltage measurement confirmed that the prepared device has the potential to become a self-powered photodetector and displays good stability and a fast response speed under various light intensities and different voltages.
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