Abstract
A novel porous Ni–P alloy thin-film was developed to fabricate embedded resistor through the electroless deposition by introducing manganese ion in electrolyte solutions. SEM images demonstrated high density of pores or holes with diameters ranging from 0.1μm to 3.0μm was formed in Ni–P thin-film when the concentrations of MnSO4·H2O changed from 0 to 50g/dm3. Resistance testing results revealed a significant increasing of resistance as the concentration of MnSO4·H2O increases and thereby a quadratical relationship between them was primly fitted with low deviation of 5.75%. Moreover, to explore the application practice of this porous thin-film in embedded resistor, distribution experiment was designed to investigate resistance tolerance using maximum deviation method. Tolerances under 15% indicated this porous Ni–P thin-film is a very practical candidate to fabricate embedded resistors.
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