Fabrication of a novel MOS diode by indium incorporation control for microelectronic applications**Project supported by the Algerian Ministry of High Education and Scientific Research through the CNEPRU Project (No. B00L002UN310220130011) and the Anvredet Project N° 18/DG/2016 “Projet Innovant: Synthèse et Caractérisation de Films Semiconducteurs Nanostructurés et Fabrication de Cellule Solaire”.

Abstract

Control of the electronic parameters on a novel metal–oxide–semiconductor (MOS) diode by indium doping incorporation is emphasized and investigated. The electronic parameters, such as ideality factor, barrier height (BH), series resistance, and charge carrier density are extracted from the current–voltage (I–V) and the capacitance–voltage (C–V) characteristics. The properties of the MOS diode based on 4%, 6% and 8% indium doped tin oxide are largely studied. The Ag/SnO/nSi/Au MOS diode is fabricated by spray pyrolysis route, at 300 °C from the In-doped SnO layer. This was grown onto n-type silicon and metallic (Au) contacts which were made by thermal evaporation under a vacuum @ 10 Torr and having a thickness of 120 nm and a diameter of 1 mm. Determined by the Cheung-Cheung approximation method, the series resistance increases (334–534 ) with the In doping level while the barrier height (BH) remains constant around 0.57 V. The Norde calculation technique gives a similar BH value of 0.69 V but the series resistance reaches higher values of 5500 . The indium doping level influences on the characteristics of Ag/SnO:In/Si/Au MOS diode while the 4% indium level causes the capacitance inversion and the device turns into p-type material.