Abstract
We have fabricated the first silicon on insulator (SOI)-type lateral pin photodiode in a Si0.8Ge0.2/Si superlattice layer grown by molecular-beam epitaxy on a sapphire substrate. The superlattice structure is maintained even after processing at a maximum temperature of 850 °C, and the lateral pin photodiode fabricated in the Si0.8Ge0.2/Si superlattice layer generated about five times as much photocurrent in the 400–1000-nm wavelength range as that in a lateral pin photodiode fabricated in a Si layer of the same film thickness. It is therefore concluded that the lateral pin photodiode in the Si0.8Ge0.2/Si superlattice layer holds tremendous promise as a thin-film photosensor offering high sensitivity throughout the visible spectrum.
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Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
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