Abstract
A prebunched electron beam at microwave and millimeter wave frequencies is expected to be generated directly from a field emission cathode by applying the Gunn effect in a compound semiconductor to the cathode. In this paper, we describe the fabrication of a vertical GaAs field emitter with a high aspect ratio by combining wet and dry etching of the GaAs wafer designed for the Gunn effect. The field emission characteristics of the emitter are also described, suggesting the generation of a prebunched beam.
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