Abstract
The epitaxial liftoff (ELO) of a GaAs-AlGaAs graded-index separate-confinement-heterostructure (GRIN-SCH) single-quantum-well (SQW) laser diode and the subsequent transfer to a Si substrate are described. It is the first time that a layer structure containing Al/sub 0.60/Ga/sub 0.40/As has been lifted off, and the 5- mu m thin film was cleaved after ELO by a novel process, called wedge-induced facet cleaving (WFC). The pulsed operation performance of the ELO WFC laser was similar to that of conventionally processed GRIN-SCH SQW lasers. These results hold promise for integrating III-V short-cavity lasers on arbitrary substrates.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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