Abstract
Interdigitated back contact (IBC) solar cells offer one of the most promising routes towards highest device efficiencies but require finding of industrially feasible low cost production sequences. In this paper, the fabrication of a 22.8% efficient all‐laser‐doped IBC solar cell with localized boron and phosphorus doped contacts is reported. The laser‐based approach with localized emitter and back‐surface field regions reported here avoids costly patterning steps of the localized contacts. By means of numerical device simulations it is demonstrated that this cell is limited by recombination and contact resistivity of the localized contacts and an efficiency potential of 23.8% with improved laser parameters is demonstrated.
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