Abstract
In this paper, several metals including titanium nitride (TiN), titanium (Ti), aluminum (Al), nickel (Ni) and gold (Au), were fabricated into metallic lines with line widths less than 50 nm through electron beam lithography (EBL) and dry-etching. The lines are defined by EBL and the line widths are further reduced by oxygen cleaning from over 50 nm into about 40nm. Besides, the angle and etching rate are adjusted by gas flow and power during etching process. With these metallic lines as gate electrodes, the cutoff frequency of high electron mobility transistors can reach more than 100 GHz, and this process can be used in metal interconnection of high frequency devices as well.
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