Fabrication of 20 nm patterns for automatic measurement of electron beam size using BEAMETR technique

Abstract

BEAMETR technique is developed for robust operator independent measurement of electron beam sizes in two coordinates. This method involves software and a specially designed pattern-sample. In this paper, we report the fabrication of this sample and the demonstration of beam size and shape measurements for different Scanning Electron Microscopes and operating conditions (voltage, aperture, astigmatism) with a good consistency. Electron Beam Lithography system (100 keV) was used for patterning; proximity correction was applied to improve pattern quality. In this chip version, the minimum feature linewidth was 20 nm after lift-off.