Abstract

Polycrystalline VO 2 thin films were obtained on Si substrates by ion beam sputtering deposition and annealing in flowing Ar gas. SEM images indicate that VO 2 thin films were grown into compact surfaces. Four-probe measurements indicated that the VO 2 thin films own good electrical homogeneity. After the films’ production, micromachining technology including lithography, reaction ion etching and metallization connection processes was used to produce the optical switch array. As a result, the 128×128 element optical switch array was achieved.

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