Fabrication of 0.13-µm Device Patterns by Argon Fluoride Excimer Laser Lithography with Practical Resolution Enhancement Techniques

Abstract

This paper presents the formation results of 0.13-µ m device patterns using argon fluoride (ArF) excimer laser lithography that does not incorporate strong resolution enhancement techniques such as levenson type phase-shifting mask or quadrupole illumination. Device patterns of 0.13-µ m can be fabricated by ArF excimer laser lithography when a high performance single-layer photoresist, an anti-reflective layer, an attenuated phase-shifting mask with an off-axis illumination are used. A 0.5-µ m depth-of-focus with a 10.8% exposure latitude can be obtained. Furthermore, 0.12-µ m-rule gate patterns of memory and logic devices can be fabricated. A 1.0-µ m depth-of-focus for a 0.13-µ m pattern will be achieved.