Abstract
Zinc oxide (ZnO) is a potential candidate material for optoelectronic applications, especially for blue to ultraviolet light emitting devices, due to its fundamental advantages, such as direct wide band gap of 3.37 eV, large exciton binding energy of 60 meV, and high optical gain of 320 cm−1 at room temperature. Its luminescent properties have been intensively investigated for samples, in the form of bulk, thin film, or nanostructure, prepared by various methods and doped with different impurities. In this paper, we first review briefly the recent progress in this field. Then a comprehensive summary of the research carried out in our laboratory on ZnO preparation and its luminescent properties, will be presented, in which the involved samples include ZnO films and nanorods prepared with different methods and doped with n-type or p-type impurities. The results of ZnO based LEDs will also be discussed.
Highlights
Zinc oxide (ZnO) based materials are potential candidates for optoelectronic applications, especially for blue to ultraviolet light emitting devices, due to its fundamental advantages, such as direct wide band gap 3.37 eV, large exciton binding energy 60 meV, and high optical gain 320 cm−1 at room temperature
In terms of the ZnO related investigations, we can say that great progress has been achieved, but there are still some obstacles to be overcome for realizing its wide optoelectronic applications, which remains a hot research direction
[21,22], molecular beam epitaxy (MBE) [23,24,25,26], chemical vapor deposition (CVD) [27,28,29,30,31], aqueous solution growth [32], spray pyrolysis [3,34], sol-gel method [35,36,37,38] and vapor cooling condensation method [39] have been used in the preparation of ZnO thin films as well as nanostructured ZnO
Summary
Zinc oxide (ZnO) based materials are potential candidates for optoelectronic applications, especially for blue to ultraviolet light emitting devices, due to its fundamental advantages, such as direct wide band gap 3.37 eV, large exciton binding energy 60 meV, and high optical gain 320 cm−1 at room temperature. In terms of the ZnO related investigations, we can say that great progress has been achieved, but there are still some obstacles to be overcome for realizing its wide optoelectronic applications, which remains a hot research direction. Recent progress will be briefly reviewed and the research activity conducted in our lab will be introduced in detail.
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