Abstract
In recent decades, perovskite semiconductors have been developed rapidly with excellent performance in light-emitting diodes (LEDs) and solar cells (SCs). Recent reports indicated that both the highest external quantum efficiency (EQE) of perovskite materials (PEM) that can be used for light-emitting diodes and the power conversion efficiency (PCE) of perovskite solar cells have reached a very high value compared to the previous. In this study, electroluminescence from formamidinium lead bromide perovskite is presented. The spin-coating method was used to procedure simple devices with a fluorine-doped tin oxide/formamidinium lead bromide perovskite/fluorine-doped tin oxide structure. The structure showed a green luminescence with the center wavelength at 545 nm. In the future, we will study the fabrication of devices with the structural layers: fluorine-doped tin oxide / poly(3,4-ethylene dioxythiophene) : poly(styrene sulfonate) / perovskite / electron transport layer / Ag to create so-called PeLEDs.
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