Abstract
In this work, fabrication, electrical characterization, and modeling of fully porous pn junctions (FPJs) consisting of elemental mesoscopic crystalline junctions operating in parallel, is presented. FPJs are fabricated by anodic etching of a pn crystalline substrate and show a rectifying behavior strongly dependent on PS surface termination, as proved by electrical measurements performed after both room-temperature aging and thermal-oxidation treatment. Modeling of FPJs is performed using a lumped equivalent circuit consisting of a diode, taking into account the elemental mesoscopic junctions, and two resistances acting one in series and one in parallel to the diode, the latter taking into account conduction paths at the silicon mesocrystal surface. Best fitting of experimental data results in good agreement between theoretical and measured I-V curves, thus corroborating the proposed model.
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