Fabrication, Electrical and Photovoltaic Characterizations of SnSb2S4/n-Si Heterojunction

Abstract

An inexpensive spray pyrolysis technique was effectively used to form a p-type SnSb2S4 thin film on n-type Si wafer for the first time to produce SnSb2S4/n-Si heterojunction. The capacitance-voltage estimations of the SnSb2S4/n-Si heterojunction have been recorded in the dark condition at 1 MHZ and demonstrated that the junction has an abrupt junction behavior. The dark current-voltage curve showed that the SnSb2S4/ n-Si heterojunction exhibits good rectifying properties. The device parameters represented in the series resistance (Rs) and ideality factor (n) were obtained from the current-voltage estimations in the dark conditions. In addition, the calculated values of ideality factor (n) establish to be greater than unity and they were decreased by rising the annealed temperature. According to the illumination condition with an intensity of 100 mW/cm2, we calculate the fill factor (FF), open-circuit voltage (VOC) and the solar efficiency (η) for the SnSb2S4/ n-Si heterojunction.