Abstract
Amorphous In-Ga-Zn-O (IGZO) is a high-mobility semiconductor employed in modern thin-film transistors for displays and it is considered as a promising material for Schottky diode-based rectifiers. Properties of the electronic components based on IGZO strongly depend on the manufacturing parameters such as the oxygen partial pressure during IGZO sputtering and post-deposition thermal annealing. In this study, we investigate the combined effect of sputtering conditions of amorphous IGZO (In:Ga:Zn=1:1:1) and post-deposition thermal annealing on the properties of vertical thin-film Pt-IGZO-Cu Schottky diodes, and evaluated the applicability of the fabricated Schottky diodes for low-frequency half-wave rectifier circuits. The change of the oxygen content in the gas mixture from 1.64% to 6.25%, and post-deposition annealing is shown to increase the current rectification ratio from 10 5 to 10 7 at ±1 V, Schottky barrier height from 0.64 eV to 0.75 eV, and the ideality factor from 1.11 to 1.39. Half-wave rectifier circuits based on the fabricated Schottky diodes were simulated using parameters extracted from measured current-voltage and capacitance-voltage characteristics. The half-wave rectifier circuits were realized at 100 kHz and 300 kHz on as-fabricated Schottky diodes with active area of 200 μm × 200 μm, which is relevant for the near-field communication (125 kHz - 134 kHz), and provided the output voltage amplitude of 0.87 V for 2 V supply voltage. The simulation results matched with the measurement data, verifying the model accuracy for circuit level simulation.
Highlights
Amorphous indium-gallium-zinc oxide (In-Ga-Zn-O or IGZO) is an established material of electronic devices due to its optical transparency, high electron mobility, low temperature processability, mechanical flexibility and ease ofThe associate editor coordinating the review of this manuscript and approving it for publication was Jenny Mahoney.structuring because of the amorphous nature [1]
Transient simulation of a low-frequency half-wave rectifier circuit, where the Schottky diodes were described by extracted from I-V and C-V parameters, and characterization of the fabricated diodes in the circuit were realized to evaluate the potential application of the Pt-IGZO Schottky diodes for the near-field communication (NFC) 125 kHz – 134 kHz
Because the area of the fabricated Schottky diodes is large we focused on the low-frequency range, suitable for the NFC applications Capacitance-voltage characteristics were measured in the range of test signal of 30 kHz – 1 MHz, where the lowest noise level of the capacitance was observed
Summary
Amorphous indium-gallium-zinc oxide (In-Ga-Zn-O or IGZO) is an established material of electronic devices due to its optical transparency, high electron mobility, low temperature processability, mechanical flexibility and ease of. For amorphous oxide semiconductors all manufacturing parameters such as pressure, temperature, atmosphere, elemental ratio, pre- and post-deposition treatments as well as a contact metal lead to the modification of oxygen concentration in the film itself and at the device interfaces, determining electrical properties of the final device. Introducing of 20% O2 during the sputtering of IGZO after bottom electrode treatment and post-annealing at 200◦C were applied to fabricate Schottky diodes with a rectification ratio up to 108 and ideality factor of 1.22 [11]. The process optimization was proposed based on the analysis of the combined effect of the oxygen-containing atmosphere for sputtering of a-IGZO (ln:Ga:Zn=1:1:1) and post-deposition thermal annealing on the characteristics of the fabricated diodes. Rectifier circuit, where the Schottky diodes were described by extracted from I-V and C-V parameters, and characterization of the fabricated diodes in the circuit were realized to evaluate the potential application of the Pt-IGZO Schottky diodes for the near-field communication (NFC) 125 kHz – 134 kHz
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