Abstract
This paper presents fabrication, characterization and modeling of aluminum nitride (AIN)-gate ion-sensitive field-effect transistor based pH sensor. The AIN sensing film is deposited using pulsed DC magnetron assisted reactive sputtering technique and the process optimization has been described. Material characterization was carried out for the deposited film by X-ray diffraction, field-emission scanning electron microscopy and energy dispersive spectroscopy and it was found that AlN film has polycrystalline structure. The fabricated device is tested in different pH buffer solutions (pH 4, 7 and 10) and a sensitivity of 33 mV/pH is obtained. A simulation program with integrated circuit emphasis (SPICE) macromodel was created by introducing electrochemical parameters in a metal-oxide field-effect transistor model for performing electrochemical simulations. We performed parametric sweep of electrochemical parameters to theoretically estimate the experimental results and we observed that the inclusion of amine sites in the SPICE macromodel is essential in determining precise sensor characteristics.
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