Abstract
Data are presented on buried-heterostructure (BH) AlGaAs/ GaAs and InGaAs/AlGaAs quantum-well diode lasers (DLs) fabricated by low-temperature liquid phase mesa melt etching and regrowth. The basic laser structures were grown by either molecular beam epitaxy (MBE) or metal-organic chemical vapor deposition (MOCVD). Native ox- ides were used as a mask in the processes of melt etching and regrowth. Measurements of excess mirror temperature and parameters of internal second-harmonic generation (SHG) were used for DL characterization. The equalization of beam divergence in both planes, perpendicular and parallel to the active layer, was accomplished by using cylindrical micro- lenses, a t1Wo fradiant power in continuous-wave (cw) operation. The results on medical applications and pumping Er 31 -doped YAG crystals are reported. © 1996 Society of Photo-Optical Instrumentation Engi- neers. Subject terms: diode laser characterization; technological and medical applica- tions of diode lasers.
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