Fabrication characteristics of 1.2kV SiC JBS diode

Abstract

The design, process, and the DC and switching characterization of 4H-SiC junction barrier Schottky (JBS) diode from room temperature up to 200degC have been presented. We used a p-type, slightly deep inner ring and a simple p-type stripe in the Schottky region, and used a field limiting ring (FLR) having variable space and width for an edge termination. The fabrication process was also optimized. The JBS diode having Schottky area of 9.8 x 10-3 cm2, and having the space and width of 3 mum for FLR and ring showed the blocking voltage of 1.2 kV at reverse leakage current of 50 uA and the forward current density of 300 A/cm at 3A. We also investigated the operation of SiC JBS diode at temperature up to 200degC. Forward on-state voltage characteristics is 1.8 V(@1A) at room temperature, however, it is slightly increased to 2.4 V(@1A) at 200degC. The recovery characteristics of the fabricated JBS was 7.6 ns at room temperature. This result was much superior to that of Si-FRD.