Abstract
AgxSiyOz has the potential to inhibit the recombination of photoinduced electron hole pairs via an internal electric field induced by asymmetrical Si–O tetrahedral chains. The strength of the [SiO4] tetrahedral produces a very strong internal electric field for Ag10Si4O13. Here, a novel and convenient synthetic strategy for nano-Ag10Si4O13 based on a sol-gel method is proposed. A small band gap, an internal electric field and a small size ensure good efficiency for nano-Ag10Si4O13 during all chemical dynamical processes, including charge excitation, charge separation and charge transfer.
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