Fabrication and UV photoresponse of GaN nanowire-film hybrid films on sapphire substrates by chemical vapor deposition method

Abstract

Hybrid films composed of GaN nanowires and GaN films were prepared on sapphire substrates by chemical vapor deposition. The GaN films and GaN nanowires are all indexed to the hexagonal wurtzite structure. The photoluminescence spectra of GaN nanowire-film hybrid films are composed of a strong ultraviolet emission peak (365 nm) and a weak yellow luminescence band (∼600 nm). The UV detector based on GaN nanowire-film hybrid films shows a high responsivity of ∼2.5 A/W at 360 nm and a fast response speed of ∼22 μs.