Abstract

2-(2,3-Dihydro-1,5-dimethyl-3-oxo-2-phenyl-1 H-pyrazol-4-ylimino)-2-(4-nitrophenyl) acetonitrile (DOPNA) is an organic compound; it has been synthesized and examined as a photovoltaic material in thin-film form grown on single crystal of p-type silicon wafer substrate (p-Si). A polycrystalline structure has been formed in as-synthesized powder. Nano-crystallite grains are formed in the as-deposited film. The dark current–voltage ( I–V) characteristics of Au/p-DOPNA/p-Si/Al heterojunction diode measured at different temperatures ranging from 298 to 423 K have been investigated. The operating conduction mechanisms, series and shunt resistances, rectification ratio, ideality factor and potential barrier height were determined. The capacitance–voltage ( C–V) measurements of the device were performed in dark condition and analyzed to determine carrier concentration and built-in potential. Solar cell parameters were also evaluated and the power conversion efficiency was estimated as 5.74%.

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