Fabrication and thermoelectric properties of bulk VSe2 with layered structure

Abstract

Transition metal dichalcogenides (TMDs) with layered structures possess excellent electrical and thermal transport properties. In this work, bulk VSe2 sample with layered structure was fabricated by a conventional solid-state reaction method followed with spark plasma sintering process. The microstructure as well as thermoelectric properties were systematically studied. Bulk VSe2 possesses high electrical conductivity but relatively low Seebeck coefficient, and sample along the direction parallel to the pressing axis has a lower thermal conductivity. The maximum ZT value of 0.023 was obtained at 700 K for sample along the direction parallel to the pressing axis.