Abstract
α-Bi 2 O 3 thin films were deposited on different substrates by atomic layer deposition method. The results of X-ray diffraction, high-resolution transmission electron microscopy and X-ray photoelectron spectroscope correspond to α-Bi 2 O 3 . The Fourier transform infrared spectroscopy analyses indicate that the reaction is rather complete during the deposition. Optical properties of the films have been investigated using ultraviolet-infrared transmittance spectra in the temperature range of 8–300 K. It is found that the band gap E g decreases from 3.12 to 3.03 eV with the temperature. The parameters α B and Θ B of the Bose-Einstein model are 69.3 meV and 293.9 K, respectively. The band narrowing coefficient d E g /d T is −0.435 meV/K at room temperature. The present results can be considerable for future application of Bi 2 O 3 -based electro-optic and wide temperature range optoelectronic devices.
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