Abstract
Thin film MOS Capacitors are becoming popular in large area flexible electronics for various applications like display systems, memory devices and filters. MOS Capacitors mainly consists of layers of metal, insulator and semiconductor on a substrate. In this work MOS Capacitors are fabricated in clean room environment using Aluminum as metal layer, silicon nitride as insulator layer and amorphous silicon as semiconductor layers on the glass substrate. The silicon nitride and amorphous silicon were deposited using PECVD (Plasma Enhanced Chemical Vapor Deposition) techniques and Aluminum is coated using Thermal Evaporation Techniques. The size of the MOS capacitor fabricated was 3mmx3mm; shadow masking is used for obtaining contact for measurements. The Fabricated MOS capacitor is tested using semiconductor analyzer machine for capacitance measurements. The fabricated capacitor was able to give accumulation region, depletion region and inversion region at lower frequencies.
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