Abstract
On the basis of on-chip trench structure, multiple-networked SnO2 nanowire sensors are successfully fabricated by the use of the selective growth of SnO2 nanowires and their entanglement nature. The sensing performance of the trench-structured SnO2 nanowire sensors is investigated in terms of NO2. The density of nanowire junctions is deliberately controlled via changing either the trench width or the time of nanowire growth. A model is proposed to provide a general rule for preparing trench-structured nanowire sensors of superior sensing performance.
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