Abstract
Abstract Ferroelectric Bi 3.5 Sm 0.5 Ti 3 O 12 (BST) thin film has been grown on n-type Si (1 0 0) substrate by chemical solution deposition and spin coating technique. X-ray diffraction and atomic force microscope analyses confirmed that the film crystallized well at 700 °C. Metal-ferroelectric-semiconductor (MFS) configuration has been fabricated using BST as ferroelectric layer. The electrical measurements were conducted in MFS capacitor. The current–voltage characteristic displayed good insulating properties. Apparent counterclockwise hysteresis of capacitance–voltage curve for this film as the ferroelectric hysteresis was observed. The measurements of dielectric constant and dissipation factor as a function of frequency exhibited excellent dielectric properties. The MFS structure can be valuable for ferroelectric-gate field effect transistor.
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