Abstract
A series of K doped Zn 1− x Mg x O thin films have been prepared by pulsed laser deposition (PLD). Hall-effect measurements indicate that the films exhibit stable p-type behavior with duration of at least six months. The band gap of the K doped Zn 1− x Mg x O films undergoes a blueshift due to the Mg incorporation. However, photoluminescence (PL) results reveal that the crystallinity decreased with the increasing of Mg content. The fabricated K doped p-type Zn 0.95Mg 0.05O thin film exhibits good electrical properties, with resistivity of 15.21 Ω cm and hole concentration of 5.54 × 10 18 cm −3. Furthermore, a simple ZnO-based p–n heterojunction was prepared by deposition of a K-doped p-type Zn 0.95Mg 0.05O layer on Ga-doped n-type ZnO thin film with low resistivity. The p–n diode heterostructure exhibits typical rectification behavior of p–n junctions.
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