Abstract
Tunnel-type junctions with pinhole-free crystalline and amorphous MgO barriers on the order of several nm were successfully fabricated on the cleavage plane of BSCCO single crystals. Both MgO films for the tunnel barriers were grown by the molecular beam epitaxy method. The superconducting gap parameters, Δ, of a BSCCO single crystal deposited with crystalline and amorphous tunnel barriers were estimated to be 25 meV and 38 meV, respectively, for the configuration of a Nb/MgO/BSCCO junction from dI/dV-V characteristics. The possibility of different surface superconductivities for BSCCO single crystals was determined by the characterization of the MgO/BSCCO interface.
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