Fabrication and properties of high-resistivity porous silicon carbide for SiC power device passivation

Abstract

An important advantage of silicon carbide as a material for power electronics is its extremely high electric field strength. The practical use of this advantage requires the elimination of regions of high electric field concentration in the design of power devices and efficient device passivation. Little is known, however, about methods suitable for the passivation of SiC power devices. In this paper we highlight the use of high resistivity porous silicon carbide formed by photo-assisted anodization of SiC in HF-based solutions as a possible surface passivant.