Abstract
Al–P codoped ZnO (ZnO:(Al, P)) films were grown on quartz substrate by radio frequency magnetron sputtering using mixture of argon and oxygen as sputtering gas. Types of conduction and electrical properties in ZnO:(Al, P) films were found to be dependent on oxygen partial pressure ratios in the sputtering gas mixture. When oxygen partial pressure ratio is 70 %, the codoped ZnO film had the best p-type conduction properties. It has room-temperature resistivity of 1.4 × 10−1 Ω cm, Hall mobility of 13.5 cm2/Vs and carrier concentration of 3.7 × 1018 cm−3. The p-type conduction behavior of the ZnO:(Al, P) film was confirmed by the rectifying I–V characteristics of the p-ZnO:(P, N)/n-ZnO homojunction. The phosphorus-related acceptor energy level was estimated to be located 126 meV above the valence band. Mechanism of the p-type conductivity was discussed in the present work.
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