Abstract
A row-column addressable 128 × 128 InAs/GaSb type-II superlattice midwave infrared photodiode array of 8 μm square pixels with 2 μm interpixel separation is fabricated with SU-8 polymer isolation after reactive ion etching pixel delineation. The dark current of the mesa etched + SU-8 passivated 8 × 8 μm2 pixel is found to be ∼800 nA at an applied reverse bias voltage, V = 0.3 V. The photoresponse of the same 8 μm square pixel under 2 ns pulsed condition shows a peak responsivity of ∼0.03 A/W at λ ∼ 3.8 μm at a temporal width of ∼ 6 ns. This enables integration of the photodiode array with a winner-takes-all read out circuit for high speed tracking applications.
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