Abstract
Er doped ZnO thin films were grown on Si substrates using SiO 2 buffer layer by pulsed laser deposition (PLD) method. The obtained films crystallize well and show high c-axis orientation. The Er content was evidently detected by the energy dispersive X-ray spectroscopy (EDS). Upon annealing in O 2 ambience at different temperatures, the films show different photoluminescence properties at 1.54 μm. The samples annealed at 700 and 850 °C show intense photoluminescence peaks which enhance with the annealing temperature, while no obvious luminescence peaks are observed for the as-grown samples or annealed at 500 °C. The possible mechanism was discussed.
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