Abstract
The fabrication and photoelectrical characteristics of suspended ZnO nanowire (NW) field-effect transistors (FETs) are presented. Single-crystal ZnO NWs are synthesized by a hydrothermal method. The fabricated FETs exhibit excellent performance. When Vds = 2.5 V, the peak transconductance of the FETs is 0.396 μS, the average electron mobility is 50.17 cm2/(V ṁ s), the resistivity is 0.96 × 102 Ω.cm at Vgs = 0 V, and the current on/off ratio (Ion/Ioff) is approximately 105. ZnO NW-FET devices exposed to ultraviolet radiation (2.5 μW/cm2) exhibit punch-through and threshold voltage (Vth) shift (from −0.6 V to +0.7 V) and a decrease by almost half of the source-drain current (Ids, from 560 nA to 320 nA) due to drain-induced barrier lowering. Continued work is underway to reveal the intrinsic properties of suspended ZnO nanowires and to explore their device applications.
Published Version
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