Abstract
Photosensitive n-ZnO:Al/PdPc/p-Si structures were fabricated by vacuum sublimation of palladium phthalocyanine with subsequent magnetron sputtering of ZnO:Al films on p-Si substrates. The current transport mechanisms and the photosensitivity of the structures obtained were investigated. It is shown that structures based on PdPc films are promising for photosensitive devices based on contacts between organic and inorganic semiconductors.
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