Abstract
In order to realize a flexible visible-near-infrared (VIS-NIR) photodetector, Si nanowires (SiNWs) were prepared on graphene (Gr) by using metal-catalyzed chemical vapor deposition, and then the Gr/SiNWs heterojunction was transferred onto a flexible polytetrafluoroethylene (PTFE) substrate by using a polymethylmethacrylate (PMMA)/polydimethylsiloxane (PDMS) as a double-layer support film. The transfer process of the flexible Gr/SiNWs heterojunction was successful. However, the mechanical stress induced by the spin coating process and volume shrinkage of the PMMA/PDMS layers had an impact on the crystalline structure of the SiNWs. The as-fabricated Gr/SiNWs heterojunction photodiode indicated rectifying behavior. Under VIS-NIR illumination of 0.1 W/cm2, an apparent operation of the photodiode with a photoelectric effect was observed.
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