Fabrication and performance of thin film transistors, TFTs, incorporating doped μc-Si source and drain contacts, and boron-compensated μc-Si channel layers

Abstract

PH3 doped n+ μc-Si, and lightly B2H6 doped intrinsic μc-Si, iμc-Si, thin films have been integrated into bottom-gate TFTs. The use of n+ μc-Si as a source/drain contact material in a-Si:H TFTs reduces the threshold voltage compared to n+ a-Si:H contacts. The use of iμc-Si as the TFT channel material, combined with a post-deposition, back-channel exposure to atomic-H yielded low-temperature processed TFTs with effective channel mobilities of ∼6.5 cm2/V-s.