Fabrication and performance of p–i–n CdTe radiation detectors

Abstract

We report on the fabrication and performance of CdTe radiation detectors in a new p–i–n structure which helps to reduce the leakage current to a minimum level. Chlorine-doped single-crystal CdTe substrates having resistivity in the order of 10 9 Ω cm were used in this study. Iodine-doped n-type CdTe layers were grown homoepitaxially on one face of each crystals using the hydrogen plasma-radical-assisted metalorganic chemical vapor deposition technique at low substrate temperature of 150°C. Indium electrode was evaporated on the n-CdTe side while a gold electrode on the opposite side acted as a p-type contact. Detectors thus fabricated exhibited low leakage current (below 0.4 nA/mm 2 at 250 V applied reverse bias for the best one) and good performance at room temperature. Spectral response of the detectors showed improved energy resolution for Am-241, Co-57, and Cs-137 radioisotopes. Detectors were further tested with X-ray photons of different intensities for their potential application in imaging systems and promising responses were obtained.