Abstract
A recently developed procedure, incorporating both preferential electrolytic etching for wafer thinning and electroplating for formation of a heat sink has been applied to the fabrication of Ka-band (26.5-40 GHz) GaAs IMPATTS. The technique is an extension of the work recently reported on 50-60 GHz silicon diodes. Both epitaxially-grown GaAs-pn juction and Schottky barrier (Pt and Cr) diodes have been fabricated. Uniform GaAs structures as thin as 4µm have been produced on plated Cu and Au supports.
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