Fabrication and Performance of 300-mm Wafer-Scale Silicon Microchannel Cooler

Abstract

This paper describes the design, fabrication, and thermal performance of 300 mm diameter wafer-scale Si microchannel coolers that demonstrated a junction temperature rise of less than 18°C when dissipating about 14 kW of power. A thermal test wafer, which included hot-spot regions to mimic high-power compute cores, was attached to the wafer-scale microchannel cooler with Pb-Sn solder. Glass manifold layers were attached to the microchannel wafer using a frit material. The average apparent heat transfer coefficient, h <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">app</sub> , was about 104,000 W/(K-m <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> ).