Abstract
ZnSe/ZnMgSSe multiple quantum wells (MQWs) were fabricated by compound-source molecular beam epitaxy on GaAs epitaxial buffer layers. X-ray diffraction and photoluminescence revealed that the MQWs had excellent crystalline quality and optical properties. The roughness of the interface is less than an atomic layer. The exciton-longitudinal-optical phonon coupling constant is the same as that of ZnSe. Binding energy of a biexciton is such large value as 20 meV due to the quantum confinement effect.
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