Abstract
Technology for the fabrication of a homogeneous array of pores in an A3B5 semiconductor matrix has been developed. Characterization with Scanning Electron Microscope and optical characterization of these samples have been carried out. Refractive indexes for the light polarized along and perpendicular to the pores have been measured. We have found that the measured values of the refractive indexes are essentially different from the average values that can be predicted in the simple model of an effective dielectric medium. Filling pores with dielectric liquid induces a dramatic modification of the optical properties of the structures.
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