Abstract
An electrochemical etching based on HCl solution was developed for use in the chemical lift-off of InP membranes. Under the same etching conditions, the diameter of InP pores increases with the increase of etching depth or etching voltage. When the etching depth or etching voltage exceeds a critical value, the InP layer can be electropolished, leading to the lift-off of nanoporous InP membranes. The lift-off membranes can be transferred onto a substrate. Compared to the planar InP wafer, the etched InP wafer and transferred InP membrane present stronger photoluminescence emission and weaker reflectance in the range of 250–850 nm.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
