Abstract
Anisotropic etching process by potassium hydroxide (KOH) and isopropyl alcohol (IPA) mixed solution in the [100] orientation silicon wafer was studied experimentally. The effect parameters of KOH concentration, IPA concentration, reaction time and temperature for wafer surface morphology were analyzed by scanning electron microscope. The results show that: a uniform, high density and good pyramid shaped single crystalline silicon surface can be obtained at 3% KOH solution buffered with 8% IPA at 80°C for 30min. By comparing single crystalline silicon micro-surface with NaOH and IPA mixed solution system of industrial fabrication, the pyramid structure is more regular and uniform by using KOH and IPA mixed solution system, which is expected to obtain better optical properties.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
