Abstract
Specific difficulties of the fabrication of Nb/Al double-barrier junctions with high current density (10 kA/cm/sup 2/) and small area (1-3 /spl mu/m/sup 2/) are discussed and possible solutions are presented. The problem of nonuniform areas of the two superposed junctions was circumvented by introducing a loading effect in the etching process. Strong backbending of the I/V-curve was reduced by increasing the thickness of the Nb layer between the two superposed junctions. In a mixer experiment in the 100 GHz frequency band a broad-band response of the double-barrier device was obtained with a minimum receiver noise temperature of 45 K at 115 GHz.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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