Fabrication and microscopic characterization of a single quantum-wire laser with high uniformity

Abstract

A T-shaped single quantum-wire laser with high spatial uniformity has been fabricated by a cleaved-edge overgrowth method with molecular beam epitaxy and a growth-interrupt annealing technique. Using micro-photoluminescence imaging and spectroscopy, we confirmed the formation of a spatially uniform quantum wire over 20 μm long without hetero-interface roughness. By optical pumping, we achieved single-mode lasing from the ground state of the single quantum wire at a threshold excitation power as low as 5 mW at 5 K .