Abstract
The electrical and luminescent characteristics of InGaAs/GaAs spin light-emitting diodes with an injector based on (In,Fe)Sb were investigated and the circular polarization of the electroluminescence was obtained for such structure. It has been established that the deposition of (In,Fe)Sb layer does not introduce any additional defects into the region of near-surface quantum wells, but directly affects the (In,Fe)Sb/GaAs interface. It was found that the application of a thin protective layer of MgO between the ferromagnetic (In,Fe)Sb injector and the light-emitting structure minimizes this effect.
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