Abstract
GaInAsP/AlGaAs lasers emitting at 0.67 ..mu..m in wavelength were fabricated on n-type (100) GaAs substrates by liquid phase epitaxy. The laser had a GaInAsP active layer clad by wide-gap Al/sub 0.7/Ga/sub 0.3/As layers. The fabrication conditions and lasing characteristics were discussed in detail at the first time. In order to obtain a low threshold laser wafer, it was required that the GaInAsP active layer be grown at 790/sup 0/C matching the lattice parameter with AlGaAs cladding layers, as well as adjusting the acceptor concentration in the AlGaAs cladding layer to be optimum. The mean threshold current density, J/sub th/ under the room-temperature pulsed operation was 5.6 kA/cm/sup 2/ for the active layer 0.26 ..mu..m thick. From theoretical and experimental dependence of the J/sub th/ on the active layer thickness d, minimum J/sub th/ of 1.9 kA/cm/sup 2/ was expected at d = 0.05 ..mu..m. The maximum light emission power and differential quantum efficiency was 30 mW/facet and 46 percent, respectively, for the 8 ..mu..m oxide stripe laser. The temperature characteristics of threshold and lasing wavelength were observed.
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