Fabrication and Integration of Soc Environment Sensing Hub with Gas/Pressure/Temperature Sensors

Abstract

This study presents the monolithic integration of pressure sensor, gas sensor and thermometer to realize an environmental sensing hub (Fig. 1), based on the TSMC 0.18 µm 1P6M CMOS platform. Merits of the proposed design are: (1) SoC environment sensing hub consisting capacitive pressure sensor, diode thermometer, and metal-oxide semiconductor (MOS) gas sensor with vertically-integrated heater, and (2) CVD parylene and drop casting ZnO-SnO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> for post-CMOS processes to enable the integration of pressure and gas sensors. Measurements demonstrate performances of proposed environmental sensing hub: pressure sensor with sensitivity of 0.23 fF/kPa, gas sensor with response of 0.06%/% for O <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> detection, and thermometer with sensitivity of 0.82 mV/°C.